Implantable multichannel electrode array based on SOI technologyCHEUNG, Karen C; DJUPSUND, Kaj; DAN, Yang et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 179-184, issn 1057-7157, 6 p.Article

Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) processMATSUMURA, A; HAMAGUCHI, I; KAWAMURA, K et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 400-414, issn 0167-9317, 15 p.Conference Paper

Fabricating capacitive micromachined ultrasonic transducers with wafer-bonding technologyYONGLI HUANG; ERGUN, A. Sanli; HAEGGSTRÖM, Edward et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 128-137, issn 1057-7157, 10 p.Article

Novel fabrication method for surface micromachined thin single-crystal silicon cantilever beamsGUPTA, Amit; DENTON, John P; MCNALLY, Helen et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 185-192, issn 1057-7157, 8 p.Article

Self-aligned vertical electrostatic combdrives for micromirror actuationKRISHNAMOORTHY, Uma; LEE, Daesung; SOLGAARD, Olav et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 4, pp 458-464, issn 1057-7157, 7 p.Article

An array of field-effect nanoplate SOI capacitors for (bio-)chemical sensingABOUZAR, M. H; POGHOSSIAN, A; PEDRAZA, A. M et al.Biosensors & bioelectronics. 2011, Vol 26, Num 6, pp 3023-3028, issn 0956-5663, 6 p.Article

Characterization of a high-density plasma immersion ion implanter with scaleable ECR large-area plasma sourceGLUKHOY, Yuri; RAHMAN, Mahmud; POPOV, Gotze et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 172-179, issn 0257-8972, 8 p.Conference Paper

Low resistivity SOI for substrate crosstalk reductionANKARCRONA, J; VESTLING, L; EKLUND, K.-H et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 8, pp 1920-1922, issn 0018-9383, 3 p.Article

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOILARRIEU, Guilhem; YAREKHA, Dmitri A; DUBOIS, Emmanuel et al.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1266-1268, issn 0741-3106, 3 p.Article

Low-subthreshold-swing tunnel transistorsQIN ZHANG; WEI ZHAO; SEABAUGH, Alan et al.IEEE electron device letters. 2006, Vol 27, Num 4, pp 297-300, issn 0741-3106, 4 p.Article

Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulationsNIGRIN, S; ARMSTRONG, G. A; KRANTI, A et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1221-1228, issn 0038-1101, 8 p.Article

Investigation of a new modified source/drain for diminished self-heating effects in nanoscale MOSFETs using computer simulationJAGADESH KUMAR, M; OROUJI, Ali A.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 33, Num 1, pp 134-138, issn 1386-9477, 5 p.Article

Integration of diamond in fully-depleted silicon-on-insulator technology as buried insulator : A theoretical analysisMAZELLIER, Jean-Paul; FAYNOT, Olivier; CRISTOLOVEANU, Sorin et al.Diamond and related materials. 2008, Vol 17, Num 7-10, pp 1248-1251, issn 0925-9635, 4 p.Conference Paper

Design, fabrication, and control of components in MEMS-based optical pickupsCHIU, Yi; CHIOU, Jin-Chem; FANG, Weileun et al.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 780-784, issn 0018-9464, 5 p., 2Conference Paper

Device Design and Electron Transport Properties of Uniaxially Strained-SOl Tri-Gate nMOSFETsIRISAWA, Toshifumi; NUMATA, Toshinori; TEZUKA, Tsutomu et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 649-654, issn 0018-9383, 6 p.Article

Low-temperature polymer-based three-dimensional silicon integrationKIM, Sang K; LEI XUE; TIWARI, Sandip et al.IEEE electron device letters. 2007, Vol 28, Num 8, pp 706-709, issn 0741-3106, 4 p.Article

Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuationsRAN YAN; LYNCH, Danny; CAYRON, Thibault et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1872-1876, issn 0038-1101, 5 p.Conference Paper

Reduction of sidewall roughness in silicon-on-insulator rib waveguidesGAO, F; WANG, Y; CAO, G et al.Applied surface science. 2006, Vol 252, Num 14, pp 5071-5075, issn 0169-4332, 5 p.Article

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETsNA, K.-I; CRISTOLOVEANU, S; BAE, Y.-H et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 150-153, issn 0038-1101, 4 p.Article

Characterization of GaN layers grown on silicon-on-insulator substratesTRIPATHY, S; WANG, L. S; CHUA, S. J et al.Applied surface science. 2006, Vol 253, Num 1, pp 236-240, issn 0169-4332, 5 p.Conference Paper

Process Control of Cantilever Deflection for Sensor Application Based on Optical WaveguidesFEI JIANG; KEATING, Adrian; MARTYNIUK, Mariusz et al.Journal of microelectromechanical systems. 2013, Vol 22, Num 3, pp 569-579, issn 1057-7157, 11 p.Article

External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETsCHANG, Wen-Teng; WANG, Chih-Chung; LIN, Jian-An et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1889-1894, issn 0018-9383, 6 p.Article

Drive Current Enhancement in Silicon-on-Quartz MOSFETsNAKAJIMA, Yoshikata; SASAKI, Kenji; HANAJIRI, Tatsuro et al.IEEE electron device letters. 2008, Vol 29, Num 8, pp 944-945, issn 0741-3106, 2 p.Article

Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO₂ high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulationLIN, Yu-Sheng; LIN, Chia-Hong; KUO, James B et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 6, pp 1373-1378, issn 0018-9383, 6 p.Article

On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistorsPOLSKY, Boris; PENZIN, Oleg; EL SAYED, Karim et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 500-506, issn 0018-9383, 7 p.Article